MBE growth techniques for InAs-based nBn IR detectors

First results from the new HgCdTe MBE detectors for WFC3 – IR channel

For the IR channel of WFC3 a new type of HgCdTe detector, with 1.7μm cutoff on MBE substrate, is under development at the Rockwell International Science Center . A first batch of array has been produced in summer 1999 and tested at the GSFC Detector Characterization Laboratory (DCL) in September-November 1999. We present the first results of the testing on the prototype HI-101,and in particular...

Fiber-Coupled Single-photon deteCtorS baSed on nbn SuperConduCting nanoStruCtureS

LLE Review, Volume 106 108 Practical quantum cryptography (QC) systems require ultrafast and high-quantum-efficiency (QE) single-photon detectors (SPD’s)1 with precise timing characteristics2 and sufficiently low dark counts. For fiber-optic QC systems, SPD’s working at the standard near-infrared (NIR) telecommunication wavelengths, namely 1.3 nm and/or 1.55 nm, with counting rates well above 1...

In situ monitoring techniques during MBE growth of nanostructures

Molecular Beam Epitaxy (MBE), one of the most established fabrication process for nanostructures with precise control at atomic level of morphology, thickness and chemical composition, has demonstrated recently extended capabilities for the selfassembly and self organization of low dimensional structures such as Quantum Dots (QD) and Quantum Wires (QW). Its main advantage is the compatibility o...

Superlattice Growth via MBE and Green’s Function Techniques

A model has been developed to simulate the growth of arrays consisting of a substrate on which alternating layers of quantum dots (QDs) and spacer layers are epitaxially grown. The substrate and spacer layers are modeled as an anisotropic elastic half-space, and the QDs are modeled as point inclusions buried within the half-space. In this model, the strain at the free surface of this half-space...

MBE growth of P-doped 1.3m InAs quantum dot lasers on silicon